The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jun. 14, 2002
Terry Leung, San Jose, CA (US);
Qiqun Zheng, Santa Clara, CA (US);
Chang-lin Hsieh, San Jose, CA (US);
Yan YE, Saratoga, CA (US);
Takehiko Komatsu, Yokohama, JP;
Terry Leung, San Jose, CA (US);
Qiqun Zheng, Santa Clara, CA (US);
Chang-Lin Hsieh, San Jose, CA (US);
Yan Ye, Saratoga, CA (US);
Takehiko Komatsu, Yokohama, JP;
Other;
Abstract
The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of exposing a portion of the low-k dielectric layer to a plasma of a process gas that includes a fluorocarbon gas, a nitrogen-containing gas, and an inert gas, wherein the volumetric flow ratio of inert:fluorocarbon gas is in the range of 20:1 to 100:1, and the volumetric flow ratio of fluorocarbon:nitrogen-containing gas is selected to provide a low-k dielectric to photoresist etching selectivity ratio greater than about 5:1 and a low-k dielectric etch rate higher than about 4000 Å/min.