The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Feb. 21, 2008
Judy Wang, Cupertino, CA (US);
Shawming MA, Sunnyvale, CA (US);
Chang-lin Hsieh, San Jose, CA (US);
Bryan Liao, Santa Clara, CA (US);
Jie Zhou, Sunnyvale, CA (US);
Hun Sang Kim, San Ramon, CA (US);
Judy Wang, Cupertino, CA (US);
Shawming Ma, Sunnyvale, CA (US);
Chang-Lin Hsieh, San Jose, CA (US);
Bryan Liao, Santa Clara, CA (US);
Jie Zhou, Sunnyvale, CA (US);
Hun Sang Kim, San Ramon, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O, but in other embodiments additional gases, such as at least one of molecular nitrogen (N), carbon monoxide (CO) or carbon dioxide (CO) may be further employed to etch to carbonaceous layers.