The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2003

Filed:

Mar. 08, 2001
Applicant:
Inventors:

Zhifeng Sui, Fremont, CA (US);

Coriolan Frum, Los Gatos, CA (US);

Jie Yuan, San Jose, CA (US);

Chang-Lin Hsieh, San Jose, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 4/00 ; G01B 1/128 ;
U.S. Cl.
CPC ...
G01J 4/00 ; G01B 1/128 ;
Abstract

A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.


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