The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Aug. 23, 2001
Yves Pierre Boiteux, Campbell, CA (US);
Hui Chen, Burlingame, CA (US);
Ivano Gregoratto, Redwood Shores, CA (US);
Chang-Lin Hsieh, San Jose, CA (US);
Hoiman Hung, San Jose, CA (US);
Sum-Yee Betty Tang, San Jose, CA (US);
Other;
Abstract
The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH F /Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material ( ) deposited on a layer of silicon oxide ( ) were etched according to the novel technique, forming relatively narrow trenches ( and ) and wider trenches ( and ). The technique is also suitable for forming dual damascene structures ( and ). In additional embodiments, manufacturing systems ( ) are provided for fabricating IC structures of the present invention. These systems include a controller ( ) that is adapted for interacting with a plurality of fabricating stations ( and ).