Gimpo, South Korea

Chang-Ki Jeon

This inventor holds 19 USPTO granted patents, primarily in Power Semiconductor Devices. Top assignees: Fairchild Korea Semiconductor Ltd., Fairchild Semiconductor Corporation, Samsung Electronics Co., Ltd.. Active years: 1999-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Ki Jeon. Retrieved from https://idiyas.com/inventor/chang-ki-jeon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 8

Forward Citations = 267(Granted Patents)


Location History:

  • Bucheon-si, KR (1999)
  • Kyungki-do, KR (1999 - 2002)
  • Kyonggi-Do, KR (2005)
  • Gimpso-si, KR (2007 - 2010)
  • Gyunggi-Do, KR (2011)
  • Kimpo, KR (2002 - 2012)

Company Filing History:


Years Active: 1999-2012

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Areas of Expertise:
High Voltage
Lateral DMOS
Integrated Circuit
Trench Gate FET
Breakdown Voltage
Floating Regions
Bipolar Transistor
Current Paths
Low On-Resistance
Semiconductor Fabrication
High Breakdown Resistance
Device Manufacturing
19 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Chang-Ki Jeon in Semiconductor Technology

Introduction: Chang-Ki Jeon, a prominent inventor based in Kimpo, South Korea, has made significant strides in semiconductor technology with a remarkable portfolio of 19 patents. His innovative work has contributed to advancements in semiconductor devices that are crucial for modern electronic applications.

Latest Patents: Among Jeon's recent patents, two noteworthy inventions stand out. The first patent focuses on a "Semiconductor Device and Method of Fabricating the Same," which involves a sophisticated semiconductor device utilizing DMOS technology. This invention details a semiconductor substrate with a first conductive type well and various electrode configurations, showcasing an advanced approach to enhance efficiency and device performance.

His second latest patent, "Method of Forming Lateral Trench Gate FET with Direct Source-Drain Current Path," introduces a novel method for fabricating field-effect transistors. This patent describes the formation of a drift region with alternating conductivity type silicon layers and a specially designed trench gate that optimizes device characteristics, reflecting Jeon's commitment to innovation in the semiconductor field.

Career Highlights: Jeon has been associated with notable companies, including Fairchild Korea Semiconductor Ltd. and Fairchild Semiconductor Corporation. His work at these organizations has underscored his expertise in semiconductor manufacturing and design, influencing the development of efficient electronic components.

Collaborations: Throughout his career, Jeon has collaborated with talented professionals such as Jong-jib Kim and Min-hwan Kim. These partnerships have enriched his research and development efforts, driving forward the boundaries of semiconductor innovation.

Conclusion: Chang-Ki Jeon exemplifies the spirit of innovation in the field of semiconductor technology. With 19 patents to his name, his contributions continue to impact the industry by improving the efficiency and performance of semiconductor devices. As technology evolves, Jeon's pioneering work will undoubtedly inspire future advancements in electronic applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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