The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Sep. 10, 2002
Applicants:
Jong-jib Kim, Seoul, KR;
Chang-ki Jeon, Kimpo, KR;
Sung-lyong Kim, Suwon, KR;
Young-suk Choi, Boocheon, KR;
Min-hwan Kim, Boocheon, KR;
Inventors:
Jong-jib Kim, Seoul, KR;
Chang-ki Jeon, Kimpo, KR;
Sung-lyong Kim, Suwon, KR;
Young-suk Choi, Boocheon, KR;
Min-hwan Kim, Boocheon, KR;
Assignee:
Fairchild Korea Semiconductor Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/102 (2006.01); H01L 29/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.