Min-hwan Kim

Title: Min-hwan Kim: Innovator in High Voltage Integrated Circuits

Introduction

Min-hwan Kim is a prominent inventor based in Boocheon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in high voltage integrated circuits. With a total of 3 patents to his name, Kim's work has advanced the capabilities of electronic devices.

Latest Patents

Kim's latest patents include innovative designs that enhance the performance and reliability of high voltage integrated circuits. One of his notable inventions is a high voltage integrated circuit that includes a bipolar transistor within a high voltage island area. This design effectively separates low voltage and high voltage regions using a junction termination, allowing for an increased active region size without compromising breakdown voltage. Another significant patent is for a lateral DMOS transistor that features a reduced surface field. This invention utilizes a metal oxide semiconductor (MOS) transistor with a carefully structured substrate and drift region, optimizing the channel region for improved efficiency.

Career Highlights

Min-hwan Kim is currently employed at Fairchild Korea Semiconductor Ltd., where he continues to push the boundaries of semiconductor innovation. His expertise in high voltage integrated circuits has positioned him as a key player in the industry.

Collaborations

Throughout his career, Kim has collaborated with talented colleagues such as Chang-Ki Jeon and Young-suk Choi. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Min-hwan Kim's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborative efforts continue to shape the future of high voltage integrated circuits.