The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Jan. 11, 2008
Yong-cheol Choi, Gyeonggi-Do, KR;
Chang-ki Jeon, Gyunggi-Do, KR;
Sang-hyun Lee, Gyeonggi-Do, KR;
Abstract
A high voltage semiconductor device includes a source region of a first conductivity type having an elongated projection with two sides and a rounded tip in a semiconductor substrate. A drain region of the first conductivity type is laterally spaced from the source region in the semiconductor substrate. A gate electrode extends along the projection of the source region on the semiconductor substrate between the source and drain regions. Top floating regions of a second conductivity type are disposed between the source and drain regions in the shape of arched stripes extending along the rounded tip of the projection of the source region. The top floating regions are laterally spaced from one another by regions of the first conductivity type to thereby form alternating P-N regions along the lateral dimension.