The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Jun. 29, 2006
Applicants:
Chang-ki Jeon, Kimpo, KR;
Gary Dolny, Mountain Top, PA (US);
Inventors:
Chang-ki Jeon, Kimpo, KR;
Gary Dolny, Mountain Top, PA (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor includes a trench gate extending into a semiconductor region. The trench gate has a front wall facing a drain region and a side wall perpendicular to the front wall. A channel region extends along the side wall of the trench gate, and a drift region extends at least between the drain region and the trench gate. The drift region includes a stack of alternating conductivity type silicon layers.