The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7804150 B1

Date of Patent:

Sep. 28, 2010

Filed:

Jun. 29, 2006

Lateral trench gate fet with direct source-drain current path

Applicants:

Chang-ki Jeon, Kimpo, KR;

Gary Dolny, Mountain Top, PA (US);

Inventors:

Chang-ki Jeon, Kimpo, KR;

Gary Dolny, Mountain Top, PA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:

Townsend and Townsend and Crew LLP

Primary Examiner:

Eugene Lee

Assistant Examiner:

Peniel M Gumedzoe

Int. Cl.

CPC ...

H01L 29/94 (2006.01); H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01);

U.S. Cl.

CPC ...

Abstract

A field effect transistor includes a trench gate extending into a semiconductor region. The trench gate has a front wall facing a drain region and a side wall perpendicular to the front wall. A channel region extends along the side wall of the trench gate, and a drift region extends at least between the drain region and the trench gate. The drift region includes a stack of alternating conductivity type silicon layers.

Find Patent Forward Citations

Jeon, Chang-ki. (2010). Lateral trench gate fet with direct source-drain current path (U.S. Patent No. 7804150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7804150

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