Company Filing History:
Years Active: 2007-2016
Title: The Innovative Mind of Carolina Selva
Introduction
Carolina Selva, an accomplished inventor based in Cologno Monzese, Italy, has made significant contributions to the field of memory technology. With a portfolio of ten patents, her work focuses primarily on static random access memory (SRAM) devices. Her innovative approaches have paved the way for advancements in efficient memory operations, greatly impacting both industry and research sectors.
Latest Patents
One of Carolina's notable patents is the "Dynamically Configurable SRAM Cell for Low Voltage Operation." This invention involves a memory device comprising multiple memory cells, each designed to store logic values with different reference voltages. The architecture includes bistable latches and storage transistors, allowing for efficient operation at low voltage levels. Additionally, her patent "SRAM Memory Device and Testing Method Thereof" introduces a controller that generates internal clock signals to facilitate more efficient access and testing of the memory array, further showcasing her ingenuity in SRAM technology.
Career Highlights
Throughout her career, Carolina has been associated with leading companies in the technology sector, including STMicroelectronics S.r.l. and STMicroelectronics International N.V. Her roles in these organizations allowed her to refine her skills in memory device development and push the boundaries of conventional approaches.
Collaborations
Carolina Selva has worked alongside talented professionals such as Danilo Rimondi and Rita Zappa. Their collaboration has led to substantial developments in SRAM technologies, enhancing the overall efficacy of memory devices in modern applications.
Conclusion
Carolina Selva stands out as a visionary inventor whose work in static random access memory innovation exemplifies the spirit of ingenuity. With ten patents to her name, she continues to influence the field with her creative solutions and dedication to advancing technology. Her contributions not only enhance device performance but also inspire future innovations within the realm of memory technology.