Adjustable impedance sram memory device

Abstract

An embodiment of a memory device includes a plurality of memory cells; each memory cell includes a latch adapted to store an information bit. Said latch includes a first logic gate including a first input terminal and a first output terminal and a second logic gate including a second input terminal and a second output terminal. Said first input terminal is connected to said second output terminal and said first output terminal is connected to said second input terminal. The memory device further includes reading and writing means adapted to perform a read operation or a write operation of the information bit. Said first logic gate includes a pull-up branch coupled between a terminal for providing a supply voltage and the first output terminal, and a pull-down branch coupled between the first output terminal and a terminal for providing a reference voltage. Said second logic gate includes a pull-up branch coupled between a terminal for providing the supply voltage and the second output terminal, and a pull-down branch coupled between the second output terminal and a terminal for providing the reference voltage. Said memory device includes variation means adapted to selectively vary a gain factor of at least one between the pull-down branch and the pull-up branch of said first logic gate and second logic gate depending on the operation performed by the reading and writing means.