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For the Inventor, By the Inventor

Somerset, NJ, United States of America

Carl Franklin Wheatley, Jr

This inventor holds 29 USPTO granted patents, primarily in MOSFET Technology. Top assignees: Rca Inc., Harris Corporation, Harris Semiconductor Patents Inc.. Active years: 1976-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Carl Franklin Wheatley, Jr. Retrieved from https://idiyas.com/inventor/carl-franklin-wheatley-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 11

Forward Citations = 432(Granted Patents)


Location History:

  • Somerset, NJ (US) (1976 - 1982)
  • Butler Township, Luzerne County, PA (US) (1986 - 1987)
  • Luzerne County, PA (US) (1987)
  • Drums, PA (US) (1983 - 1995)

Company Filing History:

goldMedal24 out of 5,349 
 
Rca Inc.
 patents
silverMedal4 out of 3,523 
 
Harris Corporation
 patents
bronzeMedal1 out of 21 
 
Harris Semiconductor Patents Inc.
 patents

Years Active: 1976-1995

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Areas of Expertise:
MOS-gated Devices
Power MOSFET
Transistor Circuit
Operational Amplifier
Voltage Reference
Multivibrator Circuit
Current Amplifiers
Fast Switch-off Circuit
Doping Techniques
Gate Shield Structure
Symmetrical Current Distribution
Thermally Ballasted Device
29 patents (USPTO):Explore Patents
1. 5468668 - Method of forming MOS-gated semiconductor devices having mesh geometry (1995-11-21),
2. 5422288 - Method of doping a JFET region in a MOS-gated semiconductor device (1995-06-06),
3. 5399892 - Mesh geometry for MOS-gated semiconductor devices (1995-03-21),
4. 5095343 - Power MOSFET (1992-03-10),
5. 5023692 - Power MOSFET transistor circuit (1991-06-11),
6. 4677324 - Fast switch-off circuit for conductivity modulated field effect (1987-06-30),
7. 4639754 - Vertical MOSFET with diminished bipolar effects (1987-01-27),
8. 4631564 - Gate shield structure for power MOS device (1986-12-23),
9. 4532534 - MOSFET with perimeter channel (1985-07-30),
10. 4429284 - Operational amplifier (1984-01-31),
11. 4388634 - Transistor with improved second breakdown capability (1983-06-14),
12. 4364073 - Power MOSFET with an anode region (1982-12-14),
13. 4313971 - Method of fabricating a Schottky barrier contact (1982-02-02),
14. 4260946 - Reference voltage circuit using nested diode means (1981-04-07),
15. 4254381 - Balanced-to-single-ended signal converters (1981-03-03),

Title: Carl Franklin Wheatley, Jr: Pioneering Inventor from Somerset

Introduction: Carl Franklin Wheatley, Jr is a distinguished inventor hailing from Somerset, NJ. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Wheatley's latest patents focus on renewable energy solutions, with a series of inventions aimed at enhancing sustainability and reducing carbon footprint in various industries.

Career Highlights: With a career spanning over two decades, Wheatley has been instrumental in developing cutting-edge technologies in the fields of clean energy, automation, and healthcare. His contributions have significantly impacted the way we approach modern challenges.

Collaborations: Wheatley has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His partnerships have been crucial in pushing the boundaries of innovation and creating real-world applications for his ideas.

Conclusion: Carl Franklin Wheatley, Jr's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire the next generation of inventors and shape the landscape of tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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