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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4388634 B1

PDFFull Text
Date of Patent:
Jun. 14, 1983

Filed:

Dec. 04, 1980

Transistor with improved second breakdown capability

Applicant:
Inventors:

Robert Amantea, Griggstown, NJ (US);

Carl F Wheatley, Jr, Drums, PA (US);

Assignee:

RCA Corporation, New York, NY (US);

Attorneys:

Morris; Birgit E.

Cohen; Donald S.

Seitter; Robert P.

Primary Examiner:

Gene M Munson

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 89 ;
Abstract

A transistor having increased reverse second breakdown capabilities includes a collector formed with a high resistivity region including a channel portion adjacent the central portion of the emitter and with a lower resistivity region forming an interface around said channel portion. The second region is arranged to include a portion located laterally inwardly of the outer edges of the emitter so that a preferential current path is provided that defocuses the minority carriers injected by the emitter during the time the transistor is being switched off.

Find Patent Forward Citations

Amantea, Robert. (1983). Transistor with improved second breakdown capability (U.S. Patent No. 4388634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4388634

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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