The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
May. 19, 1994
John M Neilson, Norristown, PA (US);
Christopher L Rexer, Mountaintop, PA (US);
Carl F Wheatley, Jr, Drums, PA (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A MOS-gated semiconductor device may be manufactured by a process in which the neck region of the device is doped through a previously deposited polysilicon gate. In the method of the present invention, the dopant in the neck region of the device is not subjected to the same temperature history as the body dopant, thereby providing means to increase the ruggedness of the device and providing means by which the threshold voltage of the device may be controlled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile