Company Filing History:

11 out of 1,130

Qorvo Us, Inc.

patents

2 out of 609

Rf Micro Devices, Inc.

patents

Years Active: 2010-2021

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11069678 - Logic gate cell structure (2021-07-20),

2. 10629711 - Semiconductor device with multiple HBTs having different emitter ballast resistances (2020-04-21),

3. 10418468 - Semiconductor device with multiple HBTS having different emitter ballast resistances (2019-09-17),

4. 10170602 - Semiconductor device with multiple HBTs having different emitter ballast resistances (2019-01-01),

5. 9905678 - Semiconductor device with multiple HBTs having different emitter ballast resistances (2018-02-27),

6. 9899468 - Adaptive capacitors with reduced variation in value and in-line methods for making same (2018-02-20),

7. 9761678 - Gallium arsenide heterojunction semiconductor structure (2017-09-12),

8. 9741834 - Heterojunction bipolar transistor architecture (2017-08-22),

9. 9698137 - Electrostatic discharge (ESD) protection of capacitors using lateral surface Schottky diodes (2017-07-04),

10. 9673271 - Adaptive capacitors with reduced variation in value and in-line methods for making same (2017-06-06),

11. 9502510 - Heterojunction bipolar transistors for improved radio frequency (RF) performance (2016-11-22),

12. 8994075 - Heterojunction bipolar transistor geometry for improved power amplifier performance (2015-03-31),

13. 7656002 - Integrated bipolar transistor and field effect transistor (2010-02-02),

Title: Innovations of Brian G Moser: A Journey Through Patents and Collaborations

Introduction

Brian G Moser, a distinguished inventor based in Jamestown, NC, has made significant contributions to the field of semiconductor technology with a total of 13 patents to his name. His innovative spirit is exemplified in his latest patented technologies, which showcase advancements in logic gate cell structures and semiconductor devices.

Latest Patents

Among his recent inventions, the patent for the "Logic gate cell structure" presents a sophisticated design that includes a substrate, a channel layer over the substrate, and a field-effect transistor (FET) contact layer. This FET contact layer is divided by an isolation region, allowing for efficient current path management between multiple layers.

Additionally, Moser's patent for a "Semiconductor device with multiple HBTs having different emitter ballast resistances" demonstrates his expertise in designing heterojunction bipolar transistors (HBTs). This innovation involves a substrate supporting multiple HBTs, each equipped with distinctly structured cap components that optimize emitter ballast resistance.

Career Highlights

Throughout his career, Brian G Moser has been associated with notable companies, namely Qorvo US, Inc. and RF Micro Devices, Inc. His work in these organizations has not only propelled his personal growth as an inventor but has also contributed significantly to advancements in semiconductor technology.

Collaborations

Moser has collaborated with talented coworkers such as Peter J Zampardi and Thomas James Rogers. Their joint efforts have fostered an environment of innovation, allowing them to tackle complex challenges within the industry and create impactful technological solutions.

Conclusion

Brian G Moser continues to push the boundaries of innovation in the semiconductor field. His patents demonstrate a commitment to developing cutting-edge technologies that enhance device performance and efficiency. As his career progresses, stakeholders in the tech industry will undoubtedly keep an eye on his future contributions and the innovations that may emerge from his inventive mind.

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