The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Nov. 30, 2007
Curtis A. Barratt, Greensboro, NC (US);
Michael T. Fresina, Greensboro, NC (US);
Brian G. Moser, Jamestown, NC (US);
Dain C. Miller, Greensboro, NC (US);
Walter A. Wohlmuth, Greensboro, NC (US);
Curtis A. Barratt, Greensboro, NC (US);
Michael T. Fresina, Greensboro, NC (US);
Brian G. Moser, Jamestown, NC (US);
Dain C. Miller, Greensboro, NC (US);
Walter A. Wohlmuth, Greensboro, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.