Brad Herner

Title: Brad Herner: Innovator in Memory Cell Technology

Introduction

Brad Herner is a prominent inventor based in San Jose, CA (US), known for his significant contributions to memory cell technology. With a total of 11 patents, he has made remarkable advancements in the field of electronics, particularly in the development of memory cells that utilize reversible resistance-switching elements.

Latest Patents

Among his latest patents, one notable invention is a memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same. This innovative memory cell includes a steering element, a reversible resistance-switching element coupled to the steering element, and a silicide-forming metal layer disposed between them. The reversible resistance-switching element is composed of tantalum and is formed using a selective deposition process. Another significant patent involves a memory cell that employs a selectively grown reversible resistance-switching element. This design features a reversible resistance-switching element above a substrate, which includes an etched material layer with an oxidized layer above a non-oxidized layer.

Career Highlights

Throughout his career, Brad has worked with notable companies such as SanDisk 3D LLC and Matrix Semiconductor, Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Brad has collaborated with talented individuals in his field, including April Dawn Schricker and Mark Harold Clark. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Brad Herner's work in memory cell technology exemplifies the spirit of innovation and dedication to advancing electronic components. His contributions continue to influence the industry and pave the way for future developments in memory technology.