The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8233308 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 31, 2012

Filed:

Jun. 29, 2007
Applicants:

April Schricker, Fremont, CA (US);

Brad Herner, San Jose, CA (US);

Michael W. Konevecki, San Jose, CA (US);

Inventors:

April Schricker, Fremont, CA (US);

Brad Herner, San Jose, CA (US);

Michael W. Konevecki, San Jose, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 49/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.


Find Patent Forward Citations

Schricker, April. (2012). Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same (U.S. Patent No. 8233308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8233308

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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