The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jul. 24, 2012
Applicants:
April Schricker, Fremont, CA (US);
Brad Herner, San Jose, CA (US);
Michael W. Konevecki, San Jose, CA (US);
Inventors:
April Schricker, Fremont, CA (US);
Brad Herner, San Jose, CA (US);
Michael W. Konevecki, San Jose, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/21 (2006.01); G11C 11/36 (2006.01); H01L 29/43 (2006.01); H01L 29/8605 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); G11C 13/0007 (2013.01); H01L 45/145 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01);
Abstract
A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided.