Growing community of inventors

San Jose, CA, United States of America

Brad Herner

Average Co-Inventor Count = 3.41

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 719

Brad HernerApril Dawn Schricker (9 patents)Brad HernerMark Harold Clark (6 patents)Brad HernerMichael Konevecki (3 patents)Brad HernerChristopher John Petti (2 patents)Brad HernerJames Montague Cleeves (2 patents)Brad HernerAndrew J Walker (2 patents)Brad HernerThomas H Lee (2 patents)Brad HernerVivek Subramanian (2 patents)Brad HernerMark G Johnson (2 patents)Brad HernerPaul Michael Farmwald (2 patents)Brad HernerIgor G Kouznetzov (2 patents)Brad HernerBrad Herner (11 patents)April Dawn SchrickerApril Dawn Schricker (55 patents)Mark Harold ClarkMark Harold Clark (42 patents)Michael KoneveckiMichael Konevecki (32 patents)Christopher John PettiChristopher John Petti (157 patents)James Montague CleevesJames Montague Cleeves (146 patents)Andrew J WalkerAndrew J Walker (89 patents)Thomas H LeeThomas H Lee (72 patents)Vivek SubramanianVivek Subramanian (69 patents)Mark G JohnsonMark G Johnson (64 patents)Paul Michael FarmwaldPaul Michael Farmwald (18 patents)Igor G KouznetzovIgor G Kouznetzov (5 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Sandisk 3d LLC (10 from 669 patents)

2. Matrix Semiconductor, Inc. (1 from 145 patents)


11 patents:

1. 8913417 - Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

2. 8816315 - Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

3. 8558220 - Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

4. 8373150 - Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

5. 8236623 - Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

6. 8233308 - Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

7. 7902537 - Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

8. 7846785 - Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

9. 7824956 - Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

10. 7129538 - Dense arrays and charge storage devices

11. 6881994 - Monolithic three dimensional array of charge storage devices containing a planarized surface

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12/25/2025
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