Bonnie E Weir

Title: The Innovative Contributions of Bonnie E. Weir

Introduction

Bonnie E. Weir is a notable inventor based in Bronxville, NY (US), recognized for her significant contributions to the field of semiconductor technology. With a total of 9 patents to her name, she has made remarkable advancements in the reliability modeling of integrated circuits.

Latest Patents

Among her latest patents, one focuses on breaking up long-channel field effect transistors into smaller segments for reliability modeling. This innovation involves selecting a first MOS transistor to be simulated as at least a first transistor and a second transistor in series. The circuit is then simulated with these transistors, allowing for the calculation of device degradations and the creation of a degraded netlist. Another patent addresses the use of the entire area of a chip in time-dependent dielectric breakdown (TDDB) checking. This method determines the total MOS transistor gate area for an integrated circuit and calculates the TDDB lifetime based on that area.

Career Highlights

Bonnie has worked with prominent companies such as Agere Systems Inc. and LSI Corporation, where she has applied her expertise in semiconductor technology. Her work has contributed to advancements in the reliability and performance of integrated circuits.

Collaborations

Throughout her career, Bonnie has collaborated with esteemed colleagues, including Glenn B. Alers and Kathleen Susan Krisch. These partnerships have fostered innovation and have been instrumental in her research and development efforts.

Conclusion

Bonnie E. Weir's contributions to the field of semiconductor technology through her patents and collaborations highlight her role as a leading inventor. Her work continues to influence the industry and pave the way for future innovations.