The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 15, 2013
Lsi Corporation, San Jose, CA (US);
David Averill Bell, Lower Milford Township, PA (US);
Bonnie E. Weir, Bronxville, NY (US);
LSI Corporation, San Jose, CA (US);
Abstract
A first MOS transistor has a channel length. Based on a parameter associated with the first MOS transistor, the first MOS transistor is selected to be simulated as at least a first transistor and a second transistor in series. The circuit is simulated with the first transistor and the second transistor in place of the first MOS transistor. Based on the results of the simulation, device degradations are calculated for the first transistor the second transistor. A degraded netlist is created. In the degraded netlist, the first transistor is degraded by a device degradation for the first transistor. The second transistor is degraded by a device degradation for the second transistor. The circuit is re-simulated with the first degraded transistor and the second degraded transistor in place of the first MOS transistor.