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For the Inventor, By the Inventor

Los Altos Hills, CA, United States of America

Bing Yeh

USPTO Granted Patents = 20 


Average Co-Inventor Count = 1.5

ph-index = 9

Forward Citations = 1,248(Granted Patents)


Company Filing History:

goldMedal13 out of 622 
 
Silicon Storage Technology, Inc.
 patents
silverMedal5 out of 5 
 
Greenliant Ip, Llc.
 patents
bronzeMedal1 out of 7 
 
Greenliant LLC
 patents
4. 1 out of 2 
 
Melodytek Limited
 patents

Years Active: 1991-2023

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20 patents (USPTO):Explore Patents
1. 11616071 - NOR memory cell with vertical floating gate (2023-03-28),
2. 11101277 - Process for manufacturing NOR memory cell with vertical floating gate (2021-08-24),
3. 11075214 - NOR memory cell with vertical floating gate (2021-07-27),
4. 10756100 - NOR memory cell with L-shaped floating gate (2020-08-25),
5. 10600797 - NOR memory cell with vertical floating gate (2020-03-24),
6. 8200281 - Secure removable card and a mobile wireless communication device (2012-06-12),
7. 8005038 - Digital display system with media processor and wireless audio (2011-08-23),
8. 7519754 - Hard disk drive cache memory and playback device (2009-04-14),
9. 7119396 - NROM device (2006-10-10),
10. 6913975 - Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation (2005-07-05),
11. 6891220 - Method of programming electrons onto a floating gate of a non-volatile memory cell (2005-05-10),
12. 6882572 - Method of operating a semiconductor memory array of floating gate memory cells with horizontally oriented edges (2005-04-19),
13. 6806531 - Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation (2004-10-19),
14. 6756633 - Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges (2004-06-29),
15. 6429075 - Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby (2002-08-06),

Bing Yeh: Innovator in Nonvolatile Memory Technology

Introduction

Bing Yeh, an esteemed inventor based in Los Altos Hills, California, is recognized for his significant contributions to nonvolatile memory technology. With a remarkable portfolio of 20 patents, his innovative work has advanced the field of memory cells, particularly focusing on electrically erasable programmable technologies.

Latest Patents

Among his latest innovations, Bing Yeh has developed a patent for a NOR memory cell with a vertical floating gate. This invention features an electrically erasable programmable nonvolatile memory cell that includes a semiconductor substrate with distinct regions and an intricate design involving control gates and floating gates. The novel architecture allows for improved performance in memory applications. Additionally, he holds a patent detailing the process for manufacturing this NOR memory cell, emphasizing the structural integrity and efficiency of the design.

Career Highlights

Bing Yeh has had a stellar career, working with notable companies such as Silicon Storage Technology, Inc. and Greenliant IP, LLC. His contributions to these organizations have helped foster advancements in the semiconductor industry, particularly in the realm of nonvolatile memory solutions.

Collaborations

Throughout his career, Bing Yeh has collaborated with talented professionals in his field, including Bomy A. Chen and Dana Lee. These partnerships have enabled him to innovate and refine his designs, driving further advancements in memory technology.

Conclusion

Bing Yeh's dedication to advancing nonvolatile memory technology through his patents showcases his expertise and commitment to innovation. His work continues to influence the semiconductor industry, paving the way for future developments in memory cell technology.

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