The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Oct. 08, 2004
Bomy Chen, Cupertino, CA (US);
Dana Lee, Santa Clara, CA (US);
Yaw Wen HU, Cupertino, CA (US);
Bing Yeh, Los Altos Hills, CA (US);
Bomy Chen, Cupertino, CA (US);
Dana Lee, Santa Clara, CA (US);
Yaw Wen Hu, Cupertino, CA (US);
Bing Yeh, Los Altos Hills, CA (US);
Silicon Storage Technology, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.