Bing Wu

Title: Innovations of Bing Wu in Semiconductor Technology

Introduction

Bing Wu is a prominent inventor based in Hangzhou, China, known for his significant contributions to semiconductor technology. With a total of six patents to his name, he has made remarkable advancements in the field, particularly in the development of LDMOS transistors and trench-type MOSFETs.

Latest Patents

Bing Wu's latest patents include a novel LDMOS transistor and its manufacturing method. This invention involves forming an epitaxial layer on a substrate of a first doping type, creating a gate structure, and establishing a source region of a second doping type. The method also includes forming a patterned first insulating layer and a first conductive channel that connects the source region with the substrate. Another significant patent is for a trench-type MOSFET, which simplifies the manufacturing process by forming a trench in a semiconductor substrate and incorporating a shielding conductor and gate dielectric layer. This innovation reduces process errors compared to prior art.

Career Highlights

Bing Wu is currently employed at Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Bing Wu collaborates with notable colleagues such as Jiakun Wang and Chien Ling Chan, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Bing Wu's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a leading inventor in the field. His work continues to influence the development of advanced semiconductor devices, paving the way for future innovations.