The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Sep. 23, 2022
Silicon-magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Bing Wu, Hangzhou, CN;
Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Abstract
An LDMOS device and a fabrication method for fabricating the same are provided. The LDMOS device includes: a substrate, which is of a first dopant type; an epitaxial layer, which is of the first dopant type and formed on the substrate; a gate structure disposed on an upper surface of the epitaxial layer; a well region of the first dopant type and a drift region of a second dopant type, both disposed in the epitaxial layer; a source region of the second dopant type, disposed within the well region; a drain region of the first dopant type, disposed within the drift region; a first insulating layer covering an upper surface and two sidewalls of the gate structure and the upper surface of the epitaxial layer; and a first conducting channel extending through the first insulating layer, source region and epitaxial layer, in contact the source region.