Mahopac, NY, United States of America

Bijan Davari

This inventor holds 19 USPTO granted patents and 1 published patent application, primarily in Silicon-On-Insulator Technology. Top assignee: International Business Machines Corporation. Active years: 1989-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bijan Davari. Retrieved from https://idiyas.com/inventor/bijan-davari

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 94.7

Average Co-Inventor Count = 4.3

ph-index = 12

Forward Citations = 842(Granted Patents)


Location History:

  • Mahopac, NY (US) (1989 - 2024)
  • Mahapac, NY (US) (2024)

Company Filing History:


Years Active: 1989-2024

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Areas of Expertise:
Silicon-On-Insulator
DRAM Structures
Chip Packaging
Memory Cells
Vertical Array Devices
Buried Capacitors
Preamorphizing
Integrated Trench-Transistor
Complex Legacy Applications
Real-Time Communications
On-Device Privacy
Mobile Network
19 patents (USPTO):Explore Patents

Title: Inventor Bijan Davari: Revolutionizing Technology

Introduction: Bijan Davari, a distinguished inventor hailing from Mahopac, NY, is renowned for his groundbreaking contributions to the field of technology.

Latest Patents: Davari's recent patents showcase his innovative spirit, with a focus on advancements in semiconductor technology and integrated circuits.

Career Highlights: With a career spanning several decades, Davari has held key roles in leading tech companies, where he spearheaded research and development projects that have shaped the industry.

Collaborations: Throughout his career, Davari has collaborated with top engineers, researchers, and scientists, fostering a culture of innovation and excellence in all his projects.

Conclusion: Bijan Davari's relentless pursuit of innovation and his remarkable contributions have solidified his legacy as a trailblazer in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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