The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2004

Filed:

Dec. 30, 2002
Applicant:
Inventors:

Robert E. Bendernagel, Hopewell Junction, NY (US);

Kwang Su Choe, Mount Kisco, NY (US);

Bijan Davari, Mahopac, NY (US);

Keith E. Fogel, Mohegan Lake, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Sandip Tiwari, Ithaca, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/18234 ;
U.S. Cl.
CPC ...
H01L 3/18234 ;
Abstract

A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes shared processing steps wherein the SOI and SON structure are formed together. The present invention also provides a method of forming a composite structure which includes buried conductive/SON structures as well as a method of forming a composite structure including only buried void planes.


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