The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Jan. 14, 1999
Bijan Davari, Mahopac, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Werner Rausch, Stormville, NY (US);
Ghavam G. Shahidi, Elmsford, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for making a capacitor for a silicon-on-insulator (SOI) structure. The SOI structure has a p-type silicon base layer, a buried oxide layer, a silicon layer, and an n,layer formed within a portion of the p-type silicon base layer. The process comprises the steps of forming a buried oxide layer and a silicon layer in the p-type silicon base layer, forming an n,layer in a portion of the p-type silicon base layer, and forming electrically conductive paths to the p-type silicon base layer and the n,layer extending through the buried oxide and silicon layers.