Berkeley, CA, United States of America

Bhooshan C Popere

This inventor holds 4 USPTO granted patents and 6 published patent applications. Top assignees: Rohm & Haas Electronic Materials LLC, Dow Global Technolgoies LLC, University of California. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bhooshan C Popere. Retrieved from https://idiyas.com/inventor/bhooshan-c-popere

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 25.0

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Berkeley, CA (US) (2017 - 2019)
  • Marlborough, MA (US) (2019 - 2020)

Company Filing History:


Years Active: 2017-2020

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4 patents (USPTO):Explore Patents

Title: Bhooshan C Popere: Innovator in Semiconductor Technologies

Introduction

Bhooshan C Popere is a notable inventor based in Berkeley, CA, who has made significant contributions to the field of semiconductor technologies. With a total of 4 patents to his name, he has developed innovative solutions that enhance the manufacturing processes of electronic devices.

Latest Patents

Among his latest patents is a groundbreaking invention related to silicon-based hardmask compositions. These compositions are designed for forming thin, silicon-containing antireflective coatings, which can be easily removed during processing without requiring a separate removal step. Another notable patent involves a method for doping a substrate using a dopant-containing polymer film. This method includes applying a coating of a composition that consists of a copolymer, a dopant precursor, and a solvent on a substrate. The copolymer is capable of phase segregating and embedding the dopant precursor while in solution. The substrate is then annealed at a temperature ranging from 750 to 1300°C for a duration of 0.1 seconds to 24 hours, allowing the dopant to diffuse into the substrate. This patent also describes a semiconductor substrate featuring embedded dopant domains with diameters ranging from 3 to 30 nanometers, which comprise Group 13 or Group 15 atoms.

Career Highlights

Bhooshan has worked with prominent companies in the industry, including Rohm and Haas Electronic Materials LLC and Dow Global Technologies LLC. His experience in these organizations has allowed him to refine his expertise in semiconductor materials and processes.

Collaborations

Throughout his career, Bhooshan has collaborated with esteemed colleagues such as Suzanne M Coley and Paul J LaBeaume, contributing to various projects that advance semiconductor technology.

Conclusion

Bhooshan C Popere's innovative work in semiconductor technologies and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to shape the future of electronic device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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