The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jan. 12, 2017
The Regents of the University of California, Oakland, CA (US);
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Dow Global Technologies, Llc, Midland, MI (US);
Rachel A. Segalman, Pleasanton, CA (US);
Peter Trefonas, III, Medway, MA (US);
Bhooshan C. Popere, Berkeley, CA (US);
Andrew T. Heitsch, Midland, MI (US);
ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US);
DOW GLOBAL TECHNOLOGIES, LLC, Midland, MI (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.