Rohm & Haas Electronic Materials LLC

University of California

Dow Global Technolgoies LLC

Bhooshan C Popere

Peter Trefonas, Iii

Shintaro Yamada

Suzanne M Coley

Paul J LaBeaume

Li Cui

Andrew T Heitsch

Rachel A Segalman

Cecilia W Kiarie

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.

Silicon-based hardmask

Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300&#xb0; C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

Doping of a substrate via a dopant containing polymer film

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without the need for a separate removal step.

Growing community of inventors

Berkeley, CA, United States of America

Bhooshan C Popere