This inventor holds 8 USPTO granted patents. Top assignees: Siemens Aktiengesellschaft, International Business Machines Corporation, Kabushiki Kaisha Toshiba. Active years: 1997-2001.
Location History:
- Poughkeepsie, NY (US) (1997 - 1998)
- Saint-Cloud, FR (1998 - 1999)
- La Celle Saint-Cloud, FR (2001)
Company Filing History:
6 out of 30,294 
4 out of 166,159 
3 out of 53,211 
Years Active: 1997-2001
Title: Bernhard Poschenrieder: Innovator in Reaction Chamber Technology
Introduction
Bernhard Poschenrieder is a notable inventor based in Poughkeepsie, NY (US). He holds a total of 8 patents that showcase his contributions to the field of technology, particularly in reaction chamber apparatuses.
Latest Patents
One of his latest patents is a distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops. This invention addresses the challenge of non-uniformity in vapor deposition and etching processes by distributing reactant gases evenly across the substrate. The apparatus includes a gas distribution plate with multiple apertures and vacuum-sealed partitions that create gas distribution zones, ensuring a uniform flow of gases. Another significant patent involves a method for forming three-dimensional device structures, which includes sub-groundrule features over a first device. This innovative approach utilizes a layer with a single crystalline top surface to enhance the active area of the second device.
Career Highlights
Throughout his career, Bernhard has worked with prominent companies such as Siemens Aktiengesellschaft and IBM. His experience in these organizations has contributed to his expertise in developing advanced technologies.
Collaborations
He has collaborated with notable colleagues, including Karl Paul Muller and Klaus B Roithner, further enriching his professional journey.
Conclusion
Bernhard Poschenrieder's innovative work in reaction chamber technology and his impressive patent portfolio highlight his significant contributions to the field. His inventions continue to influence advancements in vapor deposition and etching processes.