The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Dec. 26, 1996
Applicant:
Inventors:
Karl Paul Muller, Wappinger Falls, NY (US);
Bernhard Poschenrieder, Saint-Cloud, FR;
Klaus Roithner, Wappingers Falls, NY (US);
Assignees:
Siemens Aktiengesellschaft, Munich, DE;
International Business Machines, Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438243 ; 438386 ;
Abstract
A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.