The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
Mar. 13, 1995
Karl P Muller, Wappingers Falls, NY (US);
Klaus B Roithner, Wappingers Falls, NY (US);
Bernhard Poschenrieder, Poughkeepsie, NY (US);
Toru Watanabe, Hopwell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Siemens Aktiengesellshaft, Munich, DE;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.