Le Fontanil, France

Bernard Guillaumot

This inventor holds 7 USPTO granted patents and 1 EPO patent. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Sgs-Thomson Microelectronics S.a., STMicroelectronics. Active years: 1997-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bernard Guillaumot. Retrieved from https://idiyas.com/inventor/bernard-guillaumot

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 71.4

 

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 148(Granted Patents)


Company Filing History:


Years Active: 1997-2013

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7 patents (USPTO):Explore Patents

Title: The Innovations of Bernard Guillaumot

Introduction

Bernard Guillaumot, an esteemed inventor based in Le Fontanil, France, has made significant contributions to the field of semiconductor technology. With a portfolio boasting 7 patents, Guillaumot is recognized for his pioneering inventions that have implications in various applications across electronics and photonics.

Latest Patents

Among his latest patents, two stand out for their innovative designs and methodologies. The first patent explores a "Source of photons resulting from a recombination of localized excitons." This invention describes a semiconductor layer with a unique structure involving a central portion surrounded by heavily-doped regions. It includes a layer that can be activated by excitons, complete with a first metallization and a second metallization positioned beneath it. The detailed specifications note that the distance between the two metallizations is meticulously controlled at 10 to 60 nm, enhancing the efficiency of photon emission.

The second noteworthy patent is for a "Method of manufacturing a buried-gate semiconductor device and corresponding integrated circuit." This invention comprises a semiconductor device that features a channel region and a gate region, with a distinctive buried part extending under the channel region. The process involves filling a cavity with specific materials and performing annealing to create an alloy, showcasing Guillaumot's innovative approach to semiconductor device fabrication.

Career Highlights

Bernard Guillaumot has been affiliated with prominent companies in the semiconductor industry. Notable among these are SGS-Thomson Microelectronics S.A. and STMicroelectronics (Crolles 2) SAS. His work at these institutions has not only advanced his career but also contributed significantly to the field of microelectronics.

Collaborations

Throughout his career, Guillaumot has collaborated with talented professionals such as Constantin Papadas and Emilie Bernard. These partnerships have likely fostered an environment of creativity and innovation, leading to groundbreaking inventions and advancements in technology.

Conclusion

Bernard Guillaumot's inventive spirit and significant contributions underscore his importance in the realm of semiconductor technology. With a robust patent portfolio and impactful collaborations, he continues to inspire advancements in innovation, showcasing the vital role inventors play in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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