The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Dec. 15, 2010
Roch Espiau DE Lamaestre, Grenoble, FR;
Jean-jacques Greffet, Verrieres le Buisson, FR;
Bernard Guillaumot, Le Fontanil, FR;
Ruben Esteban Llorente, Madrid, ES;
Roch Espiau de Lamaestre, Grenoble, FR;
Jean-Jacques Greffet, Verrieres le Buisson, FR;
Bernard Guillaumot, Le Fontanil, FR;
Ruben Esteban Llorente, Madrid, ES;
Abstract
A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from λ0/10*nto λ0/2*n, where λ0 is the wavelength in vacuum of the emitted light and nis the effective refractive index of the mode formed in the cavity created by the two metallizations.