The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Feb. 12, 2009
Emilie Bernard, Grenoble, FR;
Bernard Guillaumot, Le Fontanil, FR;
Philippe Coronel, Barraux, FR;
Christian Vizioz, Saint Pierre de Mesage, FR;
Emilie Bernard, Grenoble, FR;
Bernard Guillaumot, Le Fontanil, FR;
Philippe Coronel, Barraux, FR;
Christian Vizioz, Saint Pierre de Mesage, FR;
STMicroelectronics (Crolles 2) SAS, Crolles Cedex, FR;
STMicroelectronics (Grenoble) SAS, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A semiconductor device includes a semiconductor channel region and a gate region, wherein the gate region includes at least one buried part extending under the channel region. The buried part of the gate region is formed from a cavity under the channel region. The cavity is filled with a first material. An opening is made to access the first material. In one implementation, aluminium is deposited in the opening in contact with the first material. An anneal is performed to cause the aluminium to be substituted for the first material in the cavity. In another implementation, a second material different from the first material is deposited in the opening. An anneal is performed to cause an alloy of the first and second materials to be formed in the cavity.