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Benoît Amstatt

USPTO Granted Patents = 18 (Patent Applications = 3)

EPO Patents = 12 (Patent Applications = 21)

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 23(Granted Patents)

Company Filing History:

Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives

patents

2 out of 5,081

Centre National De La Recherche Scientifique

patents

4. 1 out of 32

Commissariat a L'energie Atomique Et Aux Energies

patents

where one patent can have more than one assignee

Years Active: 2016-2024

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18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12074191 - Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride (2024-08-27),

2. 11894413 - Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions (2024-02-06),

3. 11563147 - Optoelectronic device comprising three-dimensional light-emitting diodes (2023-01-24),

4. 10886427 - Optoelectronic device comprising three-dimensional diodes (2021-01-05),

5. 10801129 - Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements (2020-10-13),

6. 10651341 - Optoelectronic device and method for manufacturing same (2020-05-12),

7. 10636653 - Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps (2020-04-28),

8. 10424692 - Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths (2019-09-24),

9. 10340138 - Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide (2019-07-02),

10. 10153399 - Optoelectronic device comprising semiconductor elements and its fabrication process (2018-12-11),

11. 10026870 - Optoelectronic device having semiconductor elements (2018-07-17),

12. 9991342 - Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device (2018-06-05),

13. 9899566 - Optoelectronic device comprising microwires or nanowires (2018-02-20),

14. 9728679 - Optoelectronic device and method for manufacturing same (2017-08-08),

15. 9698011 - Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps (2017-07-04),

Title: The Innovations of Benoît Amstatt

Introduction

Benoît Amstatt is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of optoelectronics, holding a total of nine patents. His work focuses on the development of advanced light-emitting devices that utilize innovative materials and manufacturing techniques.

Latest Patents

One of his latest patents is an optoelectronic device featuring light-emitting diodes with a doped region that incorporates an external segment based on aluminum and gallium nitride. This invention includes a substrate and wire-shaped light-emitting diodes that are elongated along a longitudinal axis. Each diode consists of a doped first region, which includes a central first segment based on gallium nitride and an external second segment based on aluminum and gallium nitride. The second segment has a first portion arranged laterally around the first segment, with a specific average atomic concentration of aluminum, and a lower second portion that is electrically insulating. Another notable patent is a method for producing an optoelectronic device comprising light-emitting diodes that are homogeneous in dimensions. This method involves forming a substrate with a support face, creating areas for light-emitting diodes, and forming light confinement wall elements.

Career Highlights

Benoît Amstatt has worked with notable companies such as Aledia and the National Center for Scientific Research (Centre National De La Recherche Scientifique). His experience in these organizations has allowed him to refine his expertise in optoelectronic technologies and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Benoît has collaborated with esteemed colleagues, including Philippe Gilet and Pierre Tchoulfian. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Benoît Amstatt's contributions to the field of optoelectronics are significant, with a focus on innovative light-emitting devices and manufacturing methods. His work continues to influence the industry and pave the way for future advancements in technology.

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