Aledia

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies

Benoît Amstatt

Bérangère Hyot

Philippe Gilet

Florian Dupont

Pierre Tchoulfian

Nathalie Dechoux

Sylvia Scaringella

Marie-Francoise Armand

Thomas Lacave

Marie-Françoise Armand

Ewen Henaff

Jesus Zuniga-Perez

Hubert Bono

Erwan Dornel

Vincent Beix

Philippe Gibert

Bruno-Jules Daudin

Timothée Lassiaz

Yoann Malier

An optoelectronic device includes a substrate and wire-shaped light-emitting diodes the wire shape of which is elongate along a longitudinal axis. Each light-emitting diode has a doped first region including, over all or some of its height measured along the longitudinal axis, of a central first segment that is substantially elongate along the longitudinal axis, this segment being based on gallium nitride, and of an external second segment, this segment being based on aluminium and gallium nitride. The second segment includes an external first portion arranged laterally around the first segment (), all or some of the first portion having a first average atomic concentration of aluminium, and of a lower second portion arranged at least between the first portion of the second segment and the substrate, the second portion having a second average atomic concentration of aluminium being electrically insulating.

Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride

A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.

Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions

An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.

Optoelectronic device comprising three-dimensional light-emitting diodes

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Optoelectronic device comprising three-dimensional diodes

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Optoelectronic device and method for manufacturing same

The process for growing at least one semiconductor nanowire (), said growth process comprising a step of forming, on a substrate (), a nucleation layer () for the growth of the nanowire () and a step of growth of the nanowire (). The step of formation of the nucleation layer () comprises the following steps: deposition onto the substrate () of a layer of a transition metal () chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part () of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire ().

Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

An optoelectronic device including first, and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths

The electronic device comprises a substrate (), at least one semiconductor wire element () formed by a nitride of a group III material and an electroconductive layer () interposed between the substrate () and said at least one semiconductor wire element (). Said at least one semiconductor wire element () extends from said electroconductive layer (), and the electroconductive layer () comprises a carbide of zirconium or a carbide of hafnium.

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.

Optoelectronic device comprising semiconductor elements and its fabrication process

An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 &#x3bc;m and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.

Optoelectronic device having semiconductor elements

The electronic device comprises a substrate (), at least one semiconductor nanowire () and a buffer layer () interposed between the substrate () and said nanowire (). The buffer layer () is at least partly formed by a transition metal nitride layer () from which extends the nanowire (), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

The invention relates to an optoelectronic device comprising microwires or nanowires, each having at least one active portion () between two insulated portions (), the active portion having inclined flanks or having a diameter different from the diameter of at least one of the two insulated portions.

Optoelectronic device comprising microwires or nanowires

An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.

Growing community of inventors

Grenoble, France

Benoît Amstatt