The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jun. 22, 2015
Applicant:
Aledia, Grenoble, FR;
Inventors:
Nathalie Dechoux, Fontanil Cornillon, FR;
Thomas Lacave, Grenoble, FR;
Benoît Amstatt, Grenoble, FR;
Philippe Gibert, Saint-Etienne-de-Crossey, FR;
Assignee:
Aledia, Grenoble, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 31/18 (2006.01); H01L 29/06 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 31/03048 (2013.01); H01L 31/035227 (2013.01); H01L 31/1856 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 29/0676 (2013.01); Y10S 977/762 (2013.01);
Abstract
An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 μm and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.