Taipei, Taiwan

Bei-Shing Lien

This inventor holds 17 USPTO granted patents and 18 published patent applications, primarily in Semiconductor Circuits. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bei-Shing Lien. Retrieved from https://idiyas.com/inventor/bei-shing-lien

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019-2026

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Areas of Expertise:
Integrated Circuit
Voltage Reference Circuit
Field-Effect Transistors
Temperature Sensor Circuits
Semiconductor Device
Noise Detection
Efficiency Enhancement
Digital Loop Compensation
MOS Array Layout
17 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Bei-Shing Lien

Introduction: Bei-Shing Lien, a pioneering inventor hailing from Taipei, TW, has made significant contributions to the world of technology and innovation.

Latest Patents: Bei-Shing Lien's latest patents focus on cutting-edge advancements in artificial intelligence and renewable energy technologies, showcasing her commitment to creating a sustainable future.

Career Highlights: With a career spanning over two decades, Bei-Shing Lien has established herself as a leading figure in the tech industry, with a strong focus on research and development.

Collaborations: Throughout her career, Bei-Shing Lien has collaborated with top research institutions, universities, and tech companies to bring her innovative ideas to life, fostering a culture of creativity and collaboration.

Conclusion: Bei-Shing Lien's dedication to pushing the boundaries of innovation and technology has solidified her position as a trailblazer in the field, inspiring future generations to continue striving for excellence in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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