The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
May. 23, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Bei-Shing Lien, Taipei City, TW;
Szu-Lin Liu, Hsinchu City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); G05F 1/46 (2006.01); G05F 1/567 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); G05F 1/468 (2013.01); G05F 1/567 (2013.01);
Abstract
A bandgap voltage reference circuit is provided. In one example, a cell includes a first device including a first plurality of MOSFETs connected in series The cell further includes a second device including a second plurality of MOSFETs connected in series. The second device connects in series with the first device. The second plurality of MOSFETs has a second Vt that is higher than the first Vt. The cell further includes a reference node connected between the first stack gate device and the second stack gate device.