The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Apr. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Szu-Lin Liu, Hsinchu, TW;

Bei-Shing Lien, Taipei, TW;

Yi-Wen Chen, Hsinchu, TW;

Chin-Ho Chang, Hsinchu, TW;

Jaw-Juinn Horng, Hsinchu, TW;

Yung-Chow Peng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/011 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03K 3/011 (2013.01); H03F 3/45475 (2013.01);
Abstract

A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to generate a pulse signal, and a counter that obtains a number of pulse signals generated by the pulse signal generator, that permits the pulse signal generator to generate a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is less than a predetermined threshold value, and that inhibits the pulse signal generator from generating a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is equal to the predetermined threshold value. A method for monitoring a temperature of the semiconductor device is also disclosed.


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