Suzhou, China

Baoshun Zhang

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015-2024

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6 patents (USPTO):

Title: Baoshun Zhang - Innovator in Semiconductor Technology

Introduction

Baoshun Zhang is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advanced materials and devices that enhance the performance of electronic components.

Latest Patents

One of his latest patents is the "Vertical UMOSFET device with high channel mobility and preparation method thereof." This invention discloses a vertical UMOSFET device designed to achieve high channel mobility, featuring an epitaxial structure that includes multiple semiconductors and a unique groove structure. Another notable patent is the "Gallium oxide film based on sapphire substrate as well as growth method and application thereof." This patent outlines a method for creating gallium oxide films that improve crystal quality and reduce defect density, which is crucial for high-performance applications.

Career Highlights

Baoshun Zhang is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His innovative approaches have positioned him as a key figure in advancing the capabilities of electronic devices.

Collaborations

Throughout his career, Baoshun has collaborated with esteemed colleagues, including Xiaodong Zhang and Guohao Yu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise in the field of semiconductor research.

Conclusion

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