The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Oct. 08, 2018
Suzhou Institute of Nano-tech and Nano-bionics (Sinano), Chinese Academy of Sciences, Suzhou, CN;
Abstract
The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(AlGa)Ostrain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(AlGa)Ostrain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-GaOand α-AlO, but also effectively reduce the defect density of α-GaOepitaxial film, thus further improving the crystal quality of the α-GaOepitaxial film materials.