The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
May. 08, 2019
Suzhou Institute of Nano-tech and Nano-bionics (Sinano), Chinese Academy of Sciences, Suzhou, CN;
Guohao Yu, Suzhou, CN;
Fu Chen, Suzhou, CN;
Wenxin Tang, Suzhou, CN;
Xiaodong Zhang, Suzhou, CN;
Yong Cai, Suzhou, CN;
Baoshun Zhang, Suzhou, CN;
Abstract
The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.