The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
May. 08, 2019
Suzhou Institute of Nano-tech and Nano-bionics (Sinano), Chinese Academy of Sciences, Suzhou, CN;
Abstract
The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.