Arthur Wang

Title: Arthur Wang: Innovator in Memory Technology

Introduction

Arthur Wang is a prominent inventor based in San Jose, CA. He holds a total of 9 patents that showcase his contributions to the field of memory technology. His innovative work has significantly impacted the development of non-volatile memory systems.

Latest Patents

One of his latest patents is titled "Stackable resistive cross-point memory with Schottky diode isolation." This invention describes an electrically programmable, non-volatile resistive memory that includes an array of memory cells, bit lines, and word lines. Each memory cell consists of a resistive element and a Schottky diode connected in series. The resistive element can be formed using a film of a perovskite material, while the Schottky diode may be created from a thin film of amorphous silicon. This compact design allows for efficient memory cell stacking at the intersection of bit and word lines.

Another notable patent is the "Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma." This invention presents a method that utilizes plasma chemistry to achieve high selectivity and etch rates. The process involves a main etch step using a combination of gases and an over etch step to ensure residue removal without damaging the underlying layers.

Career Highlights

Arthur Wang has worked with several notable companies throughout his career, including Hyundai Electronics America and Winbond Electronics Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Arthur has collaborated with talented individuals such as Jein-Chen Young and Kenlin Huang. These partnerships have fostered a creative environment that has led to significant advancements in his field.

Conclusion

Arthur Wang is a distinguished inventor whose work in memory technology has led to numerous patents and innovations. His contributions continue to shape the future of non-volatile memory systems.