The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
May. 24, 2004
Kenlin Huang, Fremont, CA (US);
Kaicheng Chou, San Jose, CA (US);
Harry Luan, Saratoga, CA (US);
Jein-chen Young, Milpitas, CA (US);
Arthur Wang, San Jose, CA (US);
Kenlin Huang, Fremont, CA (US);
Kaicheng Chou, San Jose, CA (US);
Harry Luan, Saratoga, CA (US);
Jein-Chen Young, Milpitas, CA (US);
Arthur Wang, San Jose, CA (US);
Winbond Electronics Corporation, Hsin-Chu, TW;
Abstract
A high selectivity and etch rate with innovative approach of inductively coupled plasma source. Preferably, the invention includes a method using plasma chemistry that is divided into main etch step of (e.g., Cl+HBr+CF) gas combination and over etch step of (e.g., HBr+Ar). The main etch step provides a faster etch rate and selectivity while the over etch step will decrease the etch rate and ensure the stringer and residue removal without attacking the under layer.